Abstract
A 50-layer stacked InGaAs/GaAs quantum dot solar cell (QDSC) grown on GaAs (100) with a self-organized texture formed on its backside has been fabricated in aim for enhancing the photoabsorption by the QD layers. Since doped GaAs substrate has a large free-carrier absorption, a semi-insulating substrate was used for fabricating the QDSC with backside texture. A micrometer-scale texture was formed by a simple wet-etching in a NH4OH solution. The light scattering at the textured backside surface caused a light trapping effect and resulted in an increased effective optical path length by multiple reflection inside QDSC, and this effect was confirmed by the external quantum efficiency (EQE) measurement. The photoabsorption attributed to InGaAs QD layers increased by about 2.4 times compared to QDSC without a textured backside. As a result, the short-circuit current density (Jsc) measured at an air-mass 1.5 global (AM1.5G) spectrum illumination increased from Jsc = 20.9 to 21.5 mA/cm2.
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