Photoabsorption by the electronic subsystem of semiconductor quantum dots

Abstract

The cross section for photoabsorption by a semiconductor quantum dot has been calculated with the previously obtained densities of electrons in the surface traps, conduction electrons, and electrons in unionized impurities. It has been found that the total photoabsorption cross section has two characteristic maxima corresponding to absorption by conduction electrons and by electrons in traps in the bulk of the quantum dot. The contribution of electrons in traps on the surface of the quantum dot is small and manifests itself only in a relatively short-wavelength range of the spectrum.