Abstract
Four different layer structures are used to study deep-level traps in AlGaN/GaN high-electron mobility transistors (HEMTs) by photo-ionization spectroscopy. The structures grown on sapphire substrates by metal-organic chemical vapor deposition show nearly identical Hall data. However, the direct current (DC) performance of HEMTs with identical geometry is found to differ strongly. In all structures investigated, two distinct defect levels, namely, at 2.84–2.94 eV and 3.24–3.28 eV, were found from the fits of the photo-ionization cross-sectional data. Additionally, different trap concentrations can be deduced. These are in good correlation with the different transconductance and drain current measured. It is assumed that the defect levels observed are related to the AlGaN surface.
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