Abstract
This paper presents a novel method for high-resolutions imaging of band-gap energies of semiconductors. When electron-hole pairs are generated in a semiconductor irradiated with a laser, they induce electronic strains in the semiconductor. The electronic strains can be detected and imaged by a scanning probe microscope. The electron-hole-pair generation depends on the band-gap and photon energies. When there are variations in band-gap energies in a sample, strains could be detected in regions having narrower gaps than the irradiated photon energy, and so their distributions can be imaged. The threshold of electron-hole-pair generation can be varied by changing the irradiated photon energies. Consequently, we can quantitatively image the band-gap energy distributions of semiconductors.
Highlights
We proved that the detected strains were caused by electron-hole pairs by observing strains generated in Si and ZnO due to irradiation with 368-nm and 1033-nm lasers
We present quantitative imaging of the band-gap energy of LiCoO2 ranging between 2.1 eV and 2.4 eV
High-resolution imaging of variations in bandgap energies plays an important role in the development of devices
Summary
We proved that the detected strains were caused by electron-hole pairs by observing strains generated in Si and ZnO due to irradiation with 368-nm and 1033-nm lasers. We introduce a novel method for imaging bandgap variations based on the detection of electric strains caused by electron-hole pair generation using a scanning probe microscope (SPM). When electron-hole pairs are generated in semiconductors by photon injection, electric strains are induced.
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