Abstract
Photo-induced balanced ambipolar transports in lead phthalocyanine organic field-effect transistor are observed. The transport mode of the device is changed from typical p-channel to ambipolar under illumination at 655 nm, 100 mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The physical origins of this phenomenon are resulted from the photo-induced energy barrier lowering for electrons injection at the source-channel interface, which is suggested to be the downward bending of orbital level in the channel material near the source by accumulation of photo generated holes there.
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