Abstract
We investigated the temperature-dependent Hall resistance and magnetization of the semiconductor/ferromagnetic hybrid structure of GaAs:MnAs granular films under dark and laser irradiated conditions. Under the laser irradiation with the energy above the band gap energy of GaAs, negative large Hall resistance due to the anomalous Hall effect was observed below the blocking temperature T b of the MnAs clusters. The intrinsic photo-induced magnetization of the MnAs clusters was, however, hardly observed. These results indicate that the blocking phenomena correlate with the photo-induced anomalous Hall resistance of the GaAs:MnAs granular films. Therefore, the magnetic interaction between the photo-induced carriers and the blocked magnetization of the MnAs clusters plays an important role in the photo-induced phenomena in the GaAs:MnAs granular films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
