Abstract
Photo-excited removal of native oxide on a silicon substrate in NF 3 gas has been investigated at room temperature using a vacuum ultraviolet Xe lamp. In pure NF 3 at a pressure of 0.2 Torr, the oxide layer has been partly removed, and etching of the silicon substrate has also occured. When NF 3 has been diluted with H 2, the formation of a thin layer has been observed, which has been characterized as (NH 4) 2SiF 6. This layer has been removed by heating the substrate up to 100°C leaving a smooth silicon surface without native oxide. Possible reaction mechanisms are discussed.
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