Abstract
A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.
Highlights
Porous silicon technologies have many applications in semiconductor technology, optoelectronics, chemical, biological sensors and other fields of science [1,2,3,4,5]
Photo electromotive force (Photo-EMF) can be measured directly by forming a special light transparent contact on the porous surface. This contact is gas transparent too. With use of this gas and light transparent contact, we can study the properties of heterojunction under gas adsorptions by illuminating visible light
We report Photo-EMF gas sensitivity of heterojunction between porous silicon and silicon wafer by using the transparent contact
Summary
Porous silicon technologies have many applications in semiconductor technology, optoelectronics, chemical, biological sensors and other fields of science [1,2,3,4,5]. Photoluminescence of different visible light spectrum in the porous silicon under UV illumination signalize the appearance of quantum nanowires with band gaps larger than crystalline silicon. This means that a heterojunction is formed between the porous silicon and crystal silicon wafer [13]. Photo electromotive force (Photo-EMF) can be measured directly by forming a special light transparent contact on the porous surface. We report Photo-EMF gas sensitivity of heterojunction between porous silicon and silicon wafer by using the transparent contact
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