Abstract
The chemical etch of a beta-phase gallium oxide semiconductor is difficult because it has high chemical robustness. Since a chemical etch has many merits over a dry etch, we will present the photoelectrochemical (PEC) etching of beta-phase gallium oxide when electrical potential and etch temperature are changed. In our experiments, the etch pit probably initiated at the intrinsic defect sites progressed along the [001] with a low activation energy. The PEC etching rate was estimated to be 0.7 μm/min in the [001] direction at a bias of 20 V. The facet exposed by PEC etching in phosphoric acid was considered to be (−201). The optoelectronic performances, including the responsivity and response/decay characteristics, were significantly improved. More results will be presented at the ECS meeting.
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