Abstract
ABSTRACTIn this poster we will present the photo-electrical effect of pristine and nitric acid treated graphene field effect transistors made by chemical vapor deposition (CVD). The results of the decreased electrical conductance and shift of Dirac point arise from the molecular photodesorption from graphene. When post treated with nitric acid the photodesorption efficiency was decrease from 52% to 21%, which was proposed to be caused by the passivation of oxygen-bearing functionalities to CVD graphene structural defects. This result provides a new strategy of stabilizing the electrical performance of CVD graphene which is promising candidate as highly conductively photoelectrical material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
