Abstract
We have examined the suitability of calcium hexafluoroacetylacetonate as a precursor for the photochemical deposition of CaF2 onto GaAs. Initial experiments showed that, on heating in vacuum, this compound sublimed at temperatures above 50°C, and the vapour thus produced could be decomposed thermally at a temperature of 350°C to give polycrystalline layers of CaF2. Subsequent experiments in which the vapour was subjected to radiation from a high pressure xenon arc lamp also led to the deposition of CaF2 layers at temperatures as low as 100°C. An ultraviolet absorption spectrum from the vapour at 100°C shows a strong, broad (≈ 34 nm FWHM) absorption peak centred at around 267 nm, and suggests that the compound is almost ideally suited for photolytic decomposition, using the 254 nm emission line from a mercury lamp, or broad-band ultraviolet emission from a xenon lamp.
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