Abstract
Polycrystalline ZnS:Mn films with good crystallinity are grown by photo-assisted MOCVD using dimethylzinc and diethylsulphide. The growth temperature is decreased from 550 to 400°C by photo-irradiation (high-pressure mercury lamp) and no dead layer results. Patterned ZnS films can also be grown by this method. Thin film electroluminescent devices fabricated using these films have lower threshold voltages.
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