Abstract
A p-NiO/n-ZnO transparent heterojunction diode is prepared by the continuous film deposition using RF magnetron sputtering technique and processed into a chemical sensor element by photolithography patterning and chemical etching. The inter-digital sensor arrays have pn junction interfaces facing the atmosphere and its I–V response is slightly modified by the introduction of VOCs (volatile organic compounds) under dark. The sensor performance for aromatic VOCs is extremely enhanced under deep UV light (λ=254nm) irradiation and the photo-current rapidly decreases as a function of VOC concentrations. The photo-driven electron transport between photo-excited VOC adsorbates and valence band (VB) of p-NiO is essential to the VOC sensing in this system.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
