Abstract
Nanocrystalline diamond (NCD) films with and without a diamond buffer layer (BL) have been grown on p-type silicon substrates by microwave plasma enhanced chemical vapor deposition technique at different values of deposition temperature (652–884°C). The photo- and thermionic electron emission properties of NCD films have been investigated, illustrated and explained by analyzing the surface morphology and the grain shape determined by atomic force microscopy, the chemical-structural properties by Raman spectroscopy and nanocrystallites size by X-ray diffraction. The NCD films with BL grown at the highest deposition temperature have shown the highest photo- and thermionic emission currents.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
