Abstract
It has been shown that the photoionization of impurity centres followed by fast migration of the optically released nonrelaxed holes and their subsequent self-trapping occurs on excitation of CsI:Tl and CsI:Pb crystals in the impurity-induced absorption bands. From comparison of the characteristics of VK centres optically created at 4.2K in CsI:Tl and CsI:Pb crystals it has been suggested that the thermally stimulated luminescence peaks observed in CsI crystals at 60 and 90K arise from closely associated and the separated {VK-electron centre} pairs, respectively, and that 0°-diffusion of VK centres can occur when the closely associated pairs are present in the CsI crystals. A scintillation mechanism has been proposed for doped CsI crystals which explains the time and temperature dependences of the scintillations as well as the high efficiency of CsI:Tl and CsI:Na scintillators.
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