Abstract
This note reports the first observation of luminescence in n-type single crystal AlAs grown by vapor-phase epitaxy. Silicon is the dominant donor, and Mg is the dominant acceptor. At 77°K, the emission spectra are dominated by bands at 2.16 and 1.73 eV, while at 7°K, the emission is mostly via a band at ∼ 2.1 eV. It is estimated that the “optical” ionization energy of Si donors in AlAs is ∼ 70 meV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
