Phosphorus-doped ZnO films grown nitrogen ambience by magnetron sputtering on sapphire substrates

Abstract

We grew phosphorus-doped ZnO films at various temperatures on a sapphire substrate by magnetron sputtering to obtain a p-type ZnO film. The ZnO film grown under the ambient gas mixture of nitrogen and argon showed p-type behavior at a higher growth temperature. The electron concentration and mobility of the as-deposited p-type ZnO were 1.2×10 17 cm −3 and 25 cm 2/V s, respectively. The peak shift of X-ray diffraction and the strong acceptor-bound exciton peak of photoluminescence indicated that the incorporation of phosphorus was enhanced with increasing growth temperature.