Abstract
Phosphorus-doped Zn1–xMgx Te (0 ≤ x ≤ 0.31) bulk crystals with zinc-blende structure were grown by vertical Bridgman technique. Single crystalline wafers cut from the ingots have been systematically characterized by energy dispersive X-ray analysis, photoluminescence, optical reflection and transmission, and Hall measurements together with the evaluation of electroless Pd electrode to Zn0.9Mg0.1Te. The linear increase in the lattice constant and the band-gap energy with x was confirmed. In photoluminescence spectra at 4.2 K, two distinct band-edge luminescence peaks were observed, whereas there are no deep emission bands. These peaks were assigned to be bound exciton emission due to neutral P acceptor and a P acceptor related free-to-bound transition emission. Electroless Pd electrode shows the specific contact resistance lower than 5 × 10–3 Ω cm2 for the carrier concentration of ∼1017 cm–3. Conductive p -type Zn1–xMgxTe crystals with the carrier concentration of ∼1017 cm–3 were obtained for Mg composition x from 0 to 0.19. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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