Abstract
The breakdown behavior and I/V characteristics of tunnel oxide and interpoly oxide are investigated for double poly structures prepared by five different deposition and doping methods. The in situ phosphorus‐doped amorphous silicon film showed the best overall results, α‐Si doped by ion implantation is the second best choice, but this only holds for the low implantation dose applied. The breakdown field of the interpoly oxide exhibits a maximum value of 8.8 MV/cm at a doping level of about . The relation between and doping level is not understood in detail. The of the interpoly oxide continuously decreases from a value of 5 C/cm2 for lightly doped samples to a value of 1.5 C/cm2 for a doping level of .
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