Phosphorus deactivation by hydrogen on hot carrier stressed high-voltage N-channel field effect transistor CMOS device demonstrated by scanning capacitance microscopy imaging

Abstract

Junction profiles of hot electron stressed high-voltage N-channel field effect transistor (NFET) devices were measured by scanning capacitance microscopy. Deactivation of phosphorous was observed on the drain side. To directly establish a link between phosphorus deactivation and hydrogen, junction profiles were measured on an unstressed NFET (N-type metal-oxide-semiconductor) device with and without H2 plasma treatment and with subsequent 400 °C annealing in helium. Phosphorus deactivation was observed in the device after H2 plasma treatment, while subsequent 400 °C annealing led to dissociation of the P–H (or H–Si–P) bond and recovery of the device junctions.