Abstract
The maximum phosphorus concentration that can be incorporated in a silicon crystal using the Czochralski crystal growth method was investigated. The value was found to be related to the hot‐zone configuration and is about for 100mm (111) crystals grown from a short tank grower with an 18 kg charge size. This doping concentration corresponds to a resistivity value of 0.00071 Ω‐cm. When the tang‐end of a growing crystal reached this doping concentration, dislocations were generated at the center of the crystal about 50 mm above the solid/melt interface. The dislocations propagated down to the solid/melt interface and resulted in growing a dislocated crystal from that point on. Dislocation loop clusters were observed in the centers of the tang‐end crystals where the resistivity was lower than 0.00092 Ω‐cm . These clusters most likely were the slip dislocation sources. © 2000 The Electrochemical Society. All rights reserved.
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