Phosphorus and hydrogen atoms on the (0 0 1) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond

Abstract

We present a comparative scanning tunnelling microscopy (STM) study of two features on the Si(0 0 1) surface with a single dangling bond. One feature is the Si–P heterodimer—a single surface phosphorus atom substituted for one Si atom of a Si–Si dimer. The other feature is the Si–Si–H hemihydride—a single hydrogen atom adsorbed to one Si atom of a Si–Si dimer. Previous STM studies of both surface species have reported a nearly identical appearance in STM which has hampered an experimental distinction between them to date. Using voltage-dependent STM we are able to distinguish and identify both heterodimer and hemihydride on the Si(0 0 1) surface. This work is particularly relevant for the fabrication of atomic-scale Si:P devices by STM lithography on the hydrogen terminated Si(0 0 1):H surface, where it is important to monitor the distribution of single P dopants in the surface. Based on the experimental identification, we study the lateral P diffusion out of nanoscale reservoirs prepared by STM lithography.