Abstract
Phosphorus-doped ZnO (ZnO:P) nanowires were successfully prepared by a novelhigh-pressure pulsed-laser deposition process using phosphorus pentoxide as the dopantsource. Detailed cathodoluminescence studies of single ZnO:P nanowires revealedcharacteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission(A0, X, 3.356 eV), free-to-neutral-acceptor emission (e,A0, 3.314 eV), and donor-to-acceptor pair emission (DAP,∼3.24 and ∼3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV havebeen induced in the nanowires by phosphorus doping. Moreover, the induced acceptors aredistributed homogeneously along the doped nanowires.
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