Abstract
A study of phosphorous passivation of the interface states of undoped In 0.53Ga 0.47As has been carried out. Phosphorous surface passivation has been achieved by: (1) exchange reaction of the InGaAs surface under phosphine vapor or (2) direct growth of InGaP/GaP thin epitaxial layers in a metal organic vapour phase epitaxy (MOVPE) reactor. The passivated surfaces have been characterized using X-ray photoelectron spectroscopy and capacitance–voltage measurements of the MIS devices. The minimum interface state density of 2.90 × 10 11 eV −1 cm −2 was obtained for Au/Ga 2O 3(Gd 2O 3)/GaP/In 0.53Ga 0.47As structure.
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