Abstract
We report on the successful synthesis of a p-type, substitutional doping at S-site, MoS2 thin film using Phosphorous (P) as the dopant. MoS2 thin films were directly sulfurized for molybdenum films by chemical vapor deposition technique. Undoped MoS2 film showed n-type behavior and P doped samples showed p-type behavior by Hall-effect measurements in a van der Pauw (vdP) configuration of 10×10 mm2 area samples and showed ohmic behavior between the silver paste contacts. The donor and the acceptor concentration were detected to be ∼2.6×1015 cm-3 and ∼1.0×1019 cm-3, respectively. Hall-effect mobility was 61.7 cm2V-1s-1 for undoped and varied in the range of 15.5 ∼ 0.5 cm2V-1s-1 with P supply rate. However, the performance of field-effect transistors (FETs) declined by double Schottky barrier contacts where the region between Ni electrodes on the source/drain contact and the MoS2 back-gate cannot be depleted and behaves as a 3D material when used in transistor geometry, resulting in poor on/off ratio. Nevertheless, the FETs exhibit hole transport and the field-effect mobility showed values as high as the Hall-effect mobility, 76 cm2V-1s-1 in undoped MoS2 with p-type behavior and 43 cm2V-1s-1 for MoS2:P. Our findings provide important insights into the doping constraints for transition metal dichalcogenides.
Highlights
Molybdenum disulfide (MoS2), as a key material in the transition metal dichalcogenides (TMDs) family, has emerged as an attractive material and has tremendous potential for both electronic and optical applications.[1]
Several applications have already been reported in research, such as field-effect transistors (FETs),[2] photodetectors,[3] inverters,[4] and random access memory circuits,[5] including bio-sensors[6] and solar cells[7] due to its attractive properties such as high carrier mobility of ∼100-200 cm2/Vs at room temperature,[8] large current on/off ratio (∼108) in FETs,[9] strong photoluminescence (PL),[10] and tunable valley spin polarization,[11] etc
We demonstrate the transport property of field-effect transistors comparing with undoped MoS2 film and confirmed that phosphorus acts as a p-type dopant in MoS2
Summary
Molybdenum disulfide (MoS2), as a key material in the transition metal dichalcogenides (TMDs) family, has emerged as an attractive material and has tremendous potential for both electronic and optical applications.[1]. We demonstrate the transport property of field-effect transistors comparing with undoped MoS2 film and confirmed that phosphorus acts as a p-type dopant in MoS2.
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