Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology

Abstract

In this work, we study the impact of the dose rate on the electrical properties of aluminum (p-body, p+-body-contact) and phosphorous (n-source/drain) implanted 4H-SiC. We find no significant differences for dose rates ranging from 1×1011 cm-2s-1 to 2−7×1012 cm-2s-1. AFM scans across implanted and non-implanted regions after thermal oxidation and subsequent oxide etching reveal a clear dependence of the oxidation rate on the conduction type and doping concentration. In addition, we observe an increasing (decreasing) oxidation rate for increasing doping concentrations of the n-type (p-type) ion implanted areas.