Abstract
Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.
Highlights
Negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values
We demonstrate an negative differential resistance (NDR) device based on a black phosphorus (BP)/ReS2 heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio (PVCR) values of 4.2 and 6.9 at room temperature and 180 K, respectively
We demonstrated a NDR device based on a BP/ReS2 heterojunction with high PVCR values of 4.2 and 6.8 at room temperature
Summary
Based on the obtained KPFM results and the previously reported band properties (conduction band minimum, valence band maximum and band gap (Eg)) of BP and ReS2 (refs 42–44), we graphically described the predicted energy band alignment of the BP and ReS2 heterojunction at equilibrium before contact (Fig. 1g) and after contact (Fig. 1h). Under a negative voltage and a positive voltage between 0 and 0.7 V, the tunnelling current seems to dominate the diffusion current, whereas the diffusion current primarily contributes to the operation of the NDR device when a higher voltage is applied (above 0.7 V) This is graphically explained, which shows the band alignments of the BP/ReS2 heterojunction under various bias conditions. When a negative voltage is applied (Vo0 V), electron carriers are able to tunnel from the filled valence band states in BP to the empty conduction band states in a VD Ti/Pd c
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