Phosphide based Molecular Beam Epitaxy for High Power Short-Wavelength Diode Lasers

Abstract

The paper presents our recent results obtained in developing highpower GaInP/AlGaInP quantum well laser diodes for the short red-wavelength range. State-of-the-art performances have been obtained at 650nm (bright red) with high-power, in excess of 2W under continuous wave operation, emitted at 15°C. The emission wavelength was also brought down to 618nm, close to the shortest achievable wavelength with the AlGaInP material system. Our calculations and preliminary tests indicate that a significant increase of the emitted power and substantial reduction of the emission wavelength – down to the amber 600nm range – can be obtained by using advanced layer structures and more complex doping profiles.