Phosphate-Passivated SnO2 Electron Transport Layer for High-Performance Perovskite Solar Cells.

Abstract

Tin oxide (SnO2) is widely used in perovskite solar cells (PSCs) as an electron transport layer (ETL) material. However, its high surface trap density has already become a strong factor limiting PSC development. In this work, phosphoric acid is adopted to eliminate the SnO2 surface dangling bonds to increase electron collection efficiency. The phosphorus mainly exists at the boundaries in the form of chained phosphate groups, bonding with which more than 47.9% of Sn dangling bonds are eliminated. The reduction of surface trap states depresses the electron transport barriers, thus the electron mobility increases about 3 times when the concentration of phosphoric acid is optimized with 7.4 atom % in the SnO2 precursor. Furthermore, the stability of the perovskite layer deposited on the phosphate-passivated SnO2 (P-SnO2) ETL is gradually improved with an increase of the concentration. Due to the higher electron collection efficiency, the P-SnO2 ETLs can dramatically promote the power conversion efficiency (PCE) of the PSCs. As a result, the champion PSC has a PCE of 21.02%. Therefore, it has been proved that this simple method is efficient to improve the quality of ETL for high-performance PSCs.