Abstract
The electrochemical fabrication of memristive devices based on Hf is demonstrated. Electrolyte incorporation in memristors is confirmed in oxides grown in 0.1, 0.5 and 1 M phosphate buffers. The impact of phosphate species on conductive filaments formation is described. The use of 1 M phosphate buffer allows formation of Hf-O-P compounds that hinder phosphate incorporation into the bulk of the memristors. Endurance, retention and memory characteristics of anodic Hf memristors suggest improved properties, as compared with previous reports, especially after mild heat treatments of devices. High resolution atomic imaging of conducting filaments allowed further understanding of memristive switching in HfO2.
Highlights
Memristive characteristics in a metal-insulator-metal (MIM) struc ture were firstly reported at Pt/TiO2 interface [1]
Enormous scientific effort is put in investigation of conductive filaments (CF) formation based on local redox reactions within the oxide [2,3]
The smoother appearance of the Hf/HfO2 interface is related to the growth dynamic of the anodic oxide directly from the Hf parent metal under high field conditions [30]
Summary
Memristive characteristics in a metal-insulator-metal (MIM) struc ture were firstly reported at Pt/TiO2 interface [1]. Apart from predominantly vacuum-based fabrica tion approaches [4,5], new generations of non-volatile memory systems based on anodic oxides on valve metals recently emerged [6,7,8,9,10] These anodic memristors make use of an inexpensive fabrication route involving electrical field driven oxide growth from a parent metal in contact with a liquid electrolyte [11], with accurate nm thickness con trol [9]. The replacement of common and often expensive fabrication methods for memristive applications (i.e. sputtering [17,18,19], pulsed laser deposition [20,21], atomic layer deposition [22,23] and various chemical methods) with the anodization approach is extremely relevant This is due to overall costs reduction in industrial implementation and shorter turnover time, required when designing novel materials [24]. Change with temperature), electrolyte species incorporated in the insu lating oxide layer improved electrical characteristics of memristive devices
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