Abstract
The synthesis of a series of phosphane copper(I) complexes of structural type [(R 3P) mCuX] ( R = n Bu, Et, OMe; m = 2, 3; X = acetylacetonate, 4-iminopent-2-en-2-olate, picolinate, 2-(pyridin-2-yl)acetate) is presented. Possible decomposition mechanisms for these metal-organic complexes will be discussed. The use of [((MeO) 3P) 2Cu(acac)] ( 4a) and [(Et 3P) 3Cu(acac)] ( 4b) as CVD precursors in the deposition of copper onto TiN-coated oxidised silicon substrates using a low-pressure horizontal hot-wall CVD reactor at 250 °C ( 4a) or 350 °C ( 4b) deposition temperature is presented as well. Depending on the evaporation temperature and the heating rate, precursor 4a produced wire-like copper structures (particle size 650 nm, layer thickness 8.6–11.2 μm) or not completely closed layers with particle sizes of 600–1500 nm and a layer thickness of 1.1–1.4 μm. Experiments with precursor 4b resulted in the formation of non-conformal layers (crystal size 700–1100 nm, layer thickness 1.4–1.8 μm).
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