Phonon-polariton density of states in semiconductor superlattices

Abstract

An interesting property of modulated semiconductor materials is that their reflectance and absorption spectra can nearly be chosen at will by adjusting the layer geometry. Introducing the concept of phonon-polariton density of states, this paper is aimed at investigating spectral properties of multilayered materials in the infra-red frequency range. Using powerful analytical methods, we will successively consider the cases of infinite and semi-infinite superlattices. The local density of states of polariton modes is obtained using a Green's function technique. Complete information is then available on allowed radiative and non-radiative electromagnetic excitations, (as a function of frequency and wavelength), at any depth in the stratified material. This approach will depict the essential role played by the surface, which changes significantly the polariton density of states as compared to ideal unbounded materials. In multilayered materials, in addition to the effect induced by the surface, one can similarly investigate the influence of the internal interfaces on the polariton local density of states and, from these, on the optical properties of those systems. Electromagnetic eigenmodes arising from the accumulation of interfaces are crucial to assess the spectral properties involving TM-polarized radiations. Effects related to the TE-polarized radiations are explained from the macroscopic anisotropy due to the alternate growth of different semiconductors. These results will be used to discuss reflectance experiments and simulated ATR spectra.