Abstract
In the presented (first) study we analyze the changes in the phonon-drag patterns of AlAs and GaAs quantum wells as a function of well thickness. Our numerical calculations include the phonon focusing, the acoustic anisotropy of the electron-phonon coupling and the conduction-band anisotropy. From such analysis, in connection with future systematic experimental studies, one can draw information about the electron-phonon coupling parameters and the effective mass of the electrons. A domination of electron-phonon interaction by deformation potential coupling in narrow AlAs quantum wells is shown. A comparison of our numerical results with recent phonon-drag measurements of an AlAs quantum well shows very good agreement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
