Abstract
AbstractWe carry out a calculation of the phonon‐drag contribution Sg to the thermoelectric power of bulk semiconductors and quantum well structures for the first time using the balance equation transport theory extended to weakly nonuniform systems. Introducing temperature‐, wavevector‐, and modedependent phonon relaxation times due to phonon‐phonon interactions, the formula obtained can be used not only at low temperatures where the phonon mean free path is determined by boundary scattering, but also at high temperatures. Our analysis of the role of the phonon relaxation times in regard to dependencies on temperature, wavevector, and mode provides results for the linear thermoelectric power Sg which are in agreement with experimental data over a broad range of densities and temperatures. The role of hot‐electron effects in Sg isdiscussed. The importance of the contribution of Sg to the thermoelectric power in the hot‐electron transport condition is emphasized.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
