Abstract
AbstractThe phonon assisted interband absorption coefficient is calculated for a disordered semiconductor having a random field of impurities with high concentration (compensation). The frequency dependence of the contributions to the absorption coefficient due to the emission and absorption of phonons is obtained. The corresponding optical tail may be described approximately by an exponential dependence with the same characteristic energy as that obtained in case of direct transitions. Several cases are considered where the total optical tail coincides with that given by the contributions in question. The phonon‐assisted interband electroabsorption coefficients are calculated for the random field of impurities and for a smooth random field. In case of the impurity field the graphs are plotted. In case of the smooth field the asymptotic tail of the electroabsorption coefficient is calculated explicitly. The shifted band edge representation is discussed.
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