Abstract
Deep level luminescence in In0.07Ga0.93N:Mg was examined. A strong photoluminescence (PL) band at 2.45 eV was observed with a well-resolved fine structure that was attributed to phonon-assisted donor-acceptor pair (DAP) recombination. Analysis of the fine structure reveals a large Huang-Rhys parameter of 6.5 for this DAP band, indicating strong localization of carriers at DAP centers. From the phonon replicas, the longitudinal-optical (LO) phonon energy was determined to be 105 meV. The large, measured phonon energy was attributed to the large compressive strain caused by compositional fluctuations in the films.
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