Abstract

In this paper, we consider the theory of phonon-assisted cyclotron resonance (PACR) in quantum well semiconductors due to the scattering of electrons and acoustic, nonpolar and polar optical phonons. Using perturbation approach, we obtain the expression of absorption power in the case of multiphoton absorption. From the numerical and graphical method, we consider the dependence of absorption power on frequency, temperature, and magnetic field for a specific GaAs quantum well. Using profile method, we obtain the PACR-linewidth as profiles of the curves. The temperature and magnetic field dependence of the PACR-linewidth have been investigated. The results are compared with those in the case of monophoton absorption process.

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