Abstract
Phonon structure has been seen in the tunneling characteristics of silicon carbide diodes by observing the second derivative, d 2 I/d V 2, vs. bias voltage curves at 4·2 and 1·2°K. The energies of both optical and acoustical phonons have been measured using this method and the values obtained are found to be in satisfactory agreement with those energies reported using Raman spectroscopy and optical recombination radiation studies. A number of weak background lines observed are believed to arise from tunneling through defect states in the tunneling barrier. An unexplained high resistance region has been observed near V = 0 and may be the result of a high resistivity barrier in the region of the silicon contact to the n-type side of the silicon carbide diode or due to so called zero bias anomalies.
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