Abstract
We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is converted into lattice vibrations and the resulting tunneling rate depends strongly on the phonon scattering and its effective phonon spectral density. We are able to fit the measured transition rates and see imprints of interference of phonons with themselves causing oscillations in the transition rates.
Highlights
Quantum dots in semiconductors constitute a basic building block for a vast variety of experiments due to their discrete energy-level structure and high level of tunability
We review the theory derived in Ref. [18] and employ the interaction spectral density Jint of electron-phonon coupling according to Ref. [20]
The isolation of our system from electronic reservoirs, the low temperatures, and the weak tunnel coupling compared to values of detuning allowed for a direct readout of the interaction spectral density of electron-phonon coupling
Summary
Quantum dots in semiconductors constitute a basic building block for a vast variety of experiments due to their discrete energy-level structure and high level of tunability. DQDs are being tested as coherent single-photon emitters [3,4,5] as well as for their applicability as photon to electron spin converters [6]. All of these experiments suffer from relaxation and dephasing of quantum states due to their interaction with the environment. Decoherence of spin states occurs, for example, due to the randomly fluctuating magnetic field produced by the nuclear spins in the host material or due to the spin-orbit interaction coupling electronic noise to the spin degree of freedom [7]. A detailed study of this effect is in order
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