Phonon sidebands of exciton bound to NN 1 traps in [formula omitted] alloys

Abstract

Using selective excitation technology, the phonon sidebands of NN 1 pair emission are observed in GaAs 1−x P x :N (x=0.88) alloys. Due to fluorescence line narrowing, the fine structure of phonon sidebands of NN 1 pair emission, which is very similar to that of N x in GaAs 1−x P x :N and to that of NN 1 in GaP:N, including TA, LA, LO As and LO phonons, has been identified. The results experimentally confirm that the NN 1 center does exist in GaAs 1−x P x :N alloys.