Abstract
Phonon scattering in phosphorus-doped silicon has been studied using a heat-pulse technique in which backscattering is measured. With crystal sizes of the order of 10 mm and with phosphorus concentrations up to 1.8*1016 cm-3, it has been shown that single-phonon scattering is predominant. A theoretical curve has been fitted to measurements of backscattered pulse amplitude as a function of input pulse power, and from this fit the authors have been able to deduce the constant A for isotopic Rayleigh scattering in pure silicon (A=0.43 s-1 K-4), the deformation potential Eu associated with the bottom of the conduction band (Eu=8.6 eV), and the Bohr radius r0 of the phosphorus impurity (r0=16 AA). These results are in agreement with those derived by other workers from thermal conductivity measurements.
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