Phonon Scattering Effects on Temperature Dependence of Conductivity in Strained Silicon

Abstract

Temperature dependence on conductivity in strained silicon is simulated. The mobility of strained silicon is simulated by solving Poisson equation for Fermi energy with the iterative method to determine carrier concentration at a given input of impurity concentration and temperature, which is followed by a calculation of the relaxation-time approximation in Boltzman transport theory, including phonon, ionized impurity and neutral impurity scattering contributions. Changes on mobility by strain are shown to play a significant role in the temperature dependence of piezoresistance effects in silicon. Influence from phonon scattering which is dominant at room temperature is discussed.