Abstract
Type-II GaSb/GaAs quantum dot (QD) structures have attracted a great deal of attention owing to their unique optical and electrical properties associated with type-II band alignment. In this study, GaSb QDs were grown on GaAs substrates using liquid phase epitaxy (LPE) technique. The morphology of the obtained QDs was studied by scanning electron microscope and atom force microscope. The optical properties of the QDs were investigated by photoluminescence (PL) spectra. Strong first- and second-order longitudinal optical-phonon replicas were observed on the low-energy side of the wetting layer peak in the PL spectra.
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