Abstract
Phonon sidebands have been observed on the donor–bound–exciton transitions in two samples of GaN grown by hydride vapor phase epitaxy. The phonon energies of one of the sidebands were representative of transverse optical phonons. From this transition an A1 (TO) phonon energy of 533cm−1 and an E1 (TO) phonon energy of 559cm−1 was measured. Another sideband showed the coupling to occur through the longitudinal optical phonons. In this case an A1 (LO) phonon energy of 734cm−1 was measured. Multiphonon coupling was also observed.
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