Abstract
Phonons in GaN quantum dots (QDs) fabricated by Stranski–Krastanov growth are analyzed using Raman scattering and continuum models of phonon confinement. The QD samples are evaluated by Raman spectroscopy with four different excitation energies. Each excitation energy has a different penetration depth, and this makes it possible to distinguish Raman signals associated with the QDs from any other signals. In addition, the phonon frequency shift in GaN QDs are analyzed using theoretical models of the confined geometry and the internal stress, the calculated results are compared to the measured results.
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