Phonon-Limited Transport in Graphene Pseudospintronic Devices

Abstract

A predicted room-temperature phase transition from Fermi liquid to dissipationless Bose-Einstein exciton superfluid suggests that graphene pseudospin devices may have the potential to far outperform traditional CMOS devices. When examining the possibility of a room-temperature exciton condensate, it is important to consider scattering of charge carriers by phonons in each of the constituent graphene monolayers. Using the nonequilibrium Green's function formalism, we examine the effect that carrier-phonon scattering has on device performance. We find that the effect of carrier-phonon scattering has strong dependence on the device coherence length. As such, for large gate voltages, the effect of phonons on interlayer transport is negligible.