Abstract
The possibility of a feedback mechanism between nonradiative carrier captures by a deep-level defect and induced transient lattice vibrations is discussed using appropriate configuration coordinate diagrams for many carriers. By treating the lattice motion classically, we self-consistently simulate the time evolution of the interaction mode and a series of athermal captures of electron(s) and hole(s). When both the activation energies Eeact and Ehact are low, a series of successive nonradiative carrier-captures are possible for high carrier densities. However, we find that the possibility of inflation in the amplitude of lattice vibration critically depends on minority carrier capture rate and the relative width of the phonon frequency distribution. Referring to the obtained results, we discuss the phonon-kick mechanism for defect reactions.
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