Abstract
An asymmetric nanoscale cross junction is fabricated from a high-mobility Si∕SiGe heterostructure. At T=4.2K, the four-terminal current-voltage characteristics reveal a polarity-dependent breakdown of the negative bend resistance. The breakdown is accompanied by negative differential conductance found in the two-terminal current-voltage characteristics of the orthogonal current leads. We attribute this behavior to phonon emission by hot electrons. From gate-voltage-dependent measurements, we determine a phonon threshold of 19meV.
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