Abstract
The effect of well width on both the photoluminescence (PL) andphonon emission in optically excited InGaN multiple quantum well(MQW) samples has been investigated. For narrow MQW samples(w<2.5 nm), the low-temperature PL quantum efficiency is closeto unity with the phonon emission being due mainly to carrierrelaxation in the QWs. For wider MQWs samples the PL quantumefficiency is reduced and the intensity of the phonon emissionincreases. We explain this in terms of the non-radiativerecombination processes in the QWs which result in phononemission and compete with the radiative process.
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