Abstract
The authors present the results of a calculation of the low temperature ideal electrical resistivity of potassium which includes a consistent treatment of phonon drag. These results differ significantly from those of recent calculations which include the effect of phonon drag via the variational approach using the simplest trial functions for the electron and phonon distributions. It is shown that electron-phonon scattering does not, by itself, limit phonon drag to being a low temperature effect. Finally, it is pointed out that, as phonon drag significantly increases the relative contribution of the Umklapp process to the low temperature electrical resistivity, all recent investigations of the effect on the electrical resistivity of anisotropic relaxation of the electron distribution should be re-examined in the phonon drag regime.
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